The magnetic tunnel junctions of the glass/Co(10 nm/Al2O3(tx/Co50Fe50(1.8nm/Ni80Fe20(10nm)
configuration with tx varied from 1.4 to 2.6 nm were fabricated by RF-sputtering. Samples were studied by means of the AFM, HR-TEM and TMR measurements.The tunneling magnetoresistance was investigated as a
function of the thickness as well as oxygen
concentration of the insulating layer. Optimum configuration is obtained for tx = 1.8 nm. In this case,the magnetoresistance of 12% is reached in the applied
field of about 2 mT. It turns out from the analyses of the I-V characteristic that the effective barrier width and height of the isolator equal to 1.5 nm and 1.3 eV,
respectively. These magnetic tunnel junctions can be used to design pressure sensors
