| dc.contributor.author |
Okuyama M. |
vi |
| dc.date.accessioned |
2011-06-11T06:33:32Z |
|
| dc.date.available |
2011-06-11T06:33:32Z |
|
| dc.date.issued |
2007 |
vi |
| dc.identifier.citation |
Volume 127, Issue 12, Page 513-517 |
vi |
| dc.identifier.issn |
|
vi |
| dc.identifier.uri |
http://tainguyenso.vnu.edu.vn/jspui/handle/123456789/13967 |
|
| dc.description.abstract |
Recent research development of ferroelectric thin films has been introduced from the viewpoint of various electronic device application such as nonvolatile memory, infrared sensor, piezoelectric transducers and electrooptic devices. Explained materials of the ferroelectric thin films are PZT, Bi-layer-structured ferroelectrics, BiFeO3, YMnO3 and P (VDF-TrFE). © 2007 The Institute of Electrical Engineers of Japan. |
vi |
| dc.publisher |
IEEJ Transactions on Sensors and Micromachines |
vi |
| dc.subject |
Ferroelectric thin films |
vi |
| dc.subject |
Multiferroic |
vi |
| dc.subject |
Nonvolatile memory |
vi |
| dc.subject |
Sensor |
vi |
| dc.subject |
Transducer |
vi |
| dc.title |
Recent research development of ferroelectric thin films |
vi |
| dc.type |
Article |
vi |