Structural properties of P-doped ZnO

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Structural properties of P-doped ZnO

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dc.contributor.author Ngo, Thu Huong
dc.contributor.author Nguyen, Viet Tuyen
dc.contributor.author Nguyen, Hoa Hong
dc.date.accessioned 2011-04-21T02:23:06Z
dc.date.available 2011-04-21T02:23:06Z
dc.date.issued 2011
dc.identifier.citation Materials Chemistry and Physics 126 (2011) 54–57 vi
dc.identifier.uri http://hdl.handle.net/123456789/1439
dc.description.abstract P was doped into ZnO in two forms: ceramics; and nano-wires fabricated by thermal evaporation technique. When P concentration is below 6%, the compounds could be p-type with the hole concentration is of about 1018/cm3. However, this property could be lost after few weeks due to aging effect. When the P concentration is above 9%, peaks of P appear clearly in the X-ray spectra, and simultaneously, the compounds are found to be n-type. The size of grains in ceramic samples strongly depends on deposition conditions. As for wires, changing the substrate temperature and the pressure of gas flow could vary the size. The smallest size of P-doped ZnO wires that could be obtained is about 10nm for the composition of doping with 3% of P. vi
dc.language.iso en_US vi
dc.publisher Elsevier vi
dc.subject Semiconductors vi
dc.subject Nanomaterials vi
dc.title Structural properties of P-doped ZnO vi
dc.type Working Paper vi

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