Planar Hall bead array counter microchip with NiFe/IrMn bilayers

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Planar Hall bead array counter microchip with NiFe/IrMn bilayers

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dc.contributor.author Tran, Danh Mau
dc.date.accessioned 2011-04-22T03:58:38Z
dc.date.available 2011-04-22T03:58:38Z
dc.date.issued 2008
dc.identifier.uri http://tainguyenso.vnu.edu.vn/jspui/handle/123456789/4750
dc.description.abstract Abstract: The planar Hall effect (PHE) magnetic bead array countermicrochip integrating 24 of single sensors based on a simple NiFe/IrMn bilayer structure with a patterned size of 3??3 ?� m2 has been fabricated and characterized. Single PHE sensors exhibit a sensitivity of about 2.5 m/Oe. It was well applied for single Dynabeads?? M-280 detection, where one bead can induce a signal change, ??V�?�2.2 mV, under the applied magnetic field of 20 Oe and a sensing current of 2 mA. This type of microchip is promising for quickly detecting and identifying multiple biological agents in the environment. ?? 2008 American Institute of Physics. vi
dc.language.iso en vi
dc.title Planar Hall bead array counter microchip with NiFe/IrMn bilayers vi

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