| dc.contributor.author |
N.T., Son |
|
| dc.contributor.author |
P.N., Hai |
|
| dc.contributor.author |
Janzen, E. |
|
| dc.date.accessioned |
2011-05-09T03:47:26Z |
|
| dc.date.available |
2011-05-09T03:47:26Z |
|
| dc.date.issued |
2001 |
|
| dc.identifier.citation |
Volume 63, Issue 20 Art. No.: 201201, Page 2012011-2012014 |
vi |
| dc.identifier.issn |
1631829 |
|
| dc.identifier.uri |
http://tainguyenso.vnu.edu.vn/jspui/handle/123456789/7183 |
|
| dc.description.abstract |
An electron paramagnetic resonance (EPR) spectrum was observed at temperatures above 25 K in
p-type 4H and 6H SiC irradiated with electrons. The center has C3v symmetry with an electron spin S = 1/2.
Using high frequency (?95 GHz) EPR it was possible to obtain the detailed hyperfine structure due to the
interaction with the four nearest silicon neighbors, and to identify the defect as the carbon vacancy in the
positive-charge state (Vc+). The g values and hyperfine tensor of the center in both polytypes are almost the
same and no dependence on the inequivalent lattice sites has been detected. |
vi |
| dc.language.iso |
en |
vi |
| dc.publisher |
Physical Review B - Condensed Matter and Materials Physics |
vi |
| dc.subject |
carbon |
vi |
| dc.subject |
silicon |
vi |
| dc.subject |
article |
vi |
| dc.subject |
electron |
vi |
| dc.subject |
electron spin resonance |
vi |
| dc.subject |
high temperature procedures |
vi |
| dc.title |
Carbon vacancy-related defect in 4H and 6H SiC |
vi |
| dc.type |
Article |
vi |