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Please use this identifier to cite or link to this item: http://tainguyenso.vnu.edu.vn/jspui/handle/123456789/11757

Title: Coulomb blockade and negative differential conductance in metallic double-dot devices
Authors: Nguyen V.H.
Nguyen V.L.
Nguyen H.N.
Keywords: 
Issue Date: 2004
Publisher: Journal of Applied Physics
Citation: Volume 96, Issue 6, Page 3302-3306
Abstract: The stability diagrams and simulation of finite temperature current-voltage characteristics for metallic double-dot devices, were analyzed. The systematic analysis of stability diagrams was described which depends on each of coupling capacitances for the metallic double-dot device. It was observed that the cross-couplings essentially effect both size and shape of diagram cells. The results shows that negative differential conductance (NDC) is suppressed by increasing temperature and/or introducing offset charge and is very sensitive to device parameters.
URI: http://tainguyenso.vnu.edu.vn/jspui/handle/123456789/11757
ISSN: 218979
Appears in Collections:Articles of Universities of Vietnam from Scopus

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