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Title: | Coulomb blockade threshold in finite one-dimensional arrays of small tunnel junctions: Computer simulation |
Authors: | Nguyen V.L. Nguyen T.D. Nguyen H.N. |
Keywords: | |
Issue Date: | 2001 |
Publisher: | Physics Letters, Section A: General, Atomic and Solid State Physics |
Citation: | Volume 291, Issue 3-Feb, Page 150-158 |
Abstract: | The current-voltage characteristics of one-dimensional tunnel junction arrays are simulated using the semiclassical and full capacitance matrix description. The threshold voltage Vth of the Coulomb blockade (CB) is evaluated and analyzed in detail as a function of the gate capacitance C0, the array length N, the temperature, and the degree of disorder. The disordered effect is found to be essential, while the long range interaction included in the full capacitance matrix calculations, when decreasing Vth, weakly affects the qualitative behaviour of the CB for the Vth(C0) and the Vth(N) dependences. © 2001 Elsevier Science B.V. All rights reserved. |
URI: | http://tainguyenso.vnu.edu.vn/jspui/handle/123456789/11929 |
ISSN: | 3759601 |
Appears in Collections: | Articles of Universities of Vietnam from Scopus
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