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Please use this identifier to cite or link to this item: http://tainguyenso.vnu.edu.vn/jspui/handle/123456789/12061

Title: Electron-paramagnetic-resonance study of silver-induced defects in silicon
Authors: Hai P.N.
Gregorkiewicz T.
Ammerlaan C.A.J.
Don D.T.
Keywords: 
Issue Date: 1997
Publisher: Physical Review B - Condensed Matter and Materials Physics
Citation: Volume 56, Issue 8, Page 4614-4619
Abstract: In this paper two electron-paramagnetic-resonance spectra are reported in silicon doped with silver in a water vapor atmosphere. These centers, labeled Si-NL56 and Si-NL57, show the orthorhombic-I and trigonal symmetries, respectively, and an effective electron spin S= 1/2. Based on studies with enriched silver isotopes and analysis of the observed twofold hyperfine splitting, the participation of one silver atom is established for both centers. The Si-NL56 center is identified as an isolated substitutional silver atom. Due to the presence of an additional hyperfine interaction with a nuclear spin I = 5/2. the Si-NL57 spectrum is assigned to a complex of silver with another impurity introduced during the diffusion process. Taking into account the sample preparation procedure, the Si-NL57 center is attributed to an Als-Agi pair in a negative charge state.
URI: http://tainguyenso.vnu.edu.vn/jspui/handle/123456789/12061
ISSN: 1631829
Appears in Collections:Articles of Universities of Vietnam from Scopus

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