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Please use this identifier to cite or link to this item: http://tainguyenso.vnu.edu.vn/jspui/handle/123456789/12066

Title: Magnetic and electrical properties of the Ho(Co, Si)2 compounds
Authors: Duc N.H.
Oanh T.K.
Keywords: 
Issue Date: 1997
Publisher: Journal of Physics Condensed Matter
Citation: Volume 9, Issue 7, Page 1585-1598
Abstract: The magnetization, a.c. susceptibility, resistivity and magnetoresistance have been measured for the invariable-unit-cell-parameter Ho(Co1-xSix)2 compounds. The Si substitution for Co in HoCo2 yields a dramatic initial increase of TC, whereas the 3d magnetic moment is reduced. These findings may be attributed to the strong involvement of Si p states in the hierarchy of exchange interactions. The magnetic phase transition at TC is of first order for the compounds with x < 0.075. For these compounds, the coexistence of metamagnetism and the quenching of spin fluctuations at T > TC are provided.
URI: http://tainguyenso.vnu.edu.vn/jspui/handle/123456789/12066
ISSN: 9538984
Appears in Collections:Articles of Universities of Vietnam from Scopus

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