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Title: | The triplet state of indigo: Electronic structure calculations |
Authors: | Ngan V.T. Gopakumar G. Hue T.T. Nguyen M.T. |
Keywords: | |
Issue Date: | 2007 |
Publisher: | Chemical Physics Letters |
Citation: | Volume 449, Issue 3-Jan, Page 11-17 |
Abstract: | The electronic structure of indigo was determined using B3LYP functional and different basis sets. The first triplet 3Au (C2h) state of indigo is characterized by the singlet-triplet gaps of ΔET-S(vertical) = 1.23 eV and ΔET-S(adiabatic) = 0.95 eV (recent experiment: 1.04 ± 0.1 eV). The vertical S1-T1 gap amounts to 1.0 eV (exptl: 0.91 ± 0.1 eV). The electron localization function (ELF) and spin density analysis show that the singlet-triplet excitation is accompanied by a migration of electrons from the C{double bond, long}C bond and N-atoms to the adjacent C-C and C-N bonds. A low ionization energy is confirmed for indigo IEa = 6.9 eV. © 2007 Elsevier B.V. All rights reserved. |
URI: | http://tainguyenso.vnu.edu.vn/jspui/handle/123456789/12197 |
ISSN: | 92614 |
Appears in Collections: | Articles of Universities of Vietnam from Scopus
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