Formation of source and drain of a-Si:H TFT by ion implantation through metal technique

Abstract

Ion implantation through metal technique (ITM) has been applied to form source and drain regions of hydrogenated amorphous silicon thin film transistors (a-Si:H TFTs) with an inverted staggered electrode structure. The metallic drain and source electrodes were used as scattering layers. Ten nanometers thickness of drain and source metallization molybdenum and titanium have been successfully selected to fabricate TFTs with good performance. The ON-OFF current ratio and the field-effect mobility of the TFT's were about 105 and 0.18 cm2/V s, respectively. © 2006 Elsevier B.V. All rights reserved.