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Please use this identifier to cite or link to this item: http://tainguyenso.vnu.edu.vn/jspui/handle/123456789/13256

Title: The effect of image force and temperature on electrical characteristics of layer-type MTJs
Authors: Tuan N.A.
Lien D.P.
Keywords: Magnetic tunnel junction
Three-layer structures
Tunnel characteristics
Issue Date: 2009
Publisher: Journal of Physics: Conference Series
Citation: Volume 187, Issue , Page -
Abstract: Tunnel resistivity R (= V/J) as a function of voltage has been calculated for magnetic tunnel junction systems, such as ferromagnet-insulator-ferromagnet three-layer structures. Our early study [1] has been carried out for determining the barrier characteristics in the MTJs based on Ni80Fe 20/Al2O3/Co systems, by fitting the experimental I-V characteristics to Simmons' and Brinkmann's models without image force. In this paper, the image force is taken into account for approaching closely to a real barrier potential. The effect of dielectric constant, and temperature on the tunnel characteristics has also been investigated. © 2009 IOP Publishing Ltd.
URI: http://tainguyenso.vnu.edu.vn/jspui/handle/123456789/13256
ISSN: 17426588
Appears in Collections:New - Articles of Universities of Vietnam from Scopus

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