Selective Si growth on partially desorbed SiO2/Si(001) surfaces

Abstract

We used in situ reflection high energy electron diffraction and ex situ atomic force microscopy to study the selective epitaxial growth of Si structures on partially desorbed SiO2/Si surfaces. The low temperature desorption of the oxide layer results in the formation of square apertures oriented along 〈 110 〉 directions. The selective growth of Si from silane is shown to evolve from (001) truncated pyramids toward the formation of complete pyramids limited by {113} facets. A model based on the anisotropic diffusion of silane is proposed to explain the formation of these Si structures. © 2007 Elsevier Ltd. All rights reserved.