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Please use this identifier to cite or link to this item:
http://tainguyenso.vnu.edu.vn/jspui/handle/123456789/13967
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| Title: | Recent research development of ferroelectric thin films |
| Authors: | Okuyama M. |
| Keywords: | Ferroelectric thin films
Multiferroic
Nonvolatile memory
Sensor
Transducer |
| Issue Date: | 2007 |
| Publisher: | IEEJ Transactions on Sensors and Micromachines |
| Citation: | Volume 127, Issue 12, Page 513-517 |
| Abstract: | Recent research development of ferroelectric thin films has been introduced from the viewpoint of various electronic device application such as nonvolatile memory, infrared sensor, piezoelectric transducers and electrooptic devices. Explained materials of the ferroelectric thin films are PZT, Bi-layer-structured ferroelectrics, BiFeO3, YMnO3 and P (VDF-TrFE). © 2007 The Institute of Electrical Engineers of Japan. |
| URI: | http://tainguyenso.vnu.edu.vn/jspui/handle/123456789/13967 |
| ISSN: | |
| Appears in Collections: | Multiferroics based Sensor Articles from Scopus
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