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Please use this identifier to cite or link to this item: http://tainguyenso.vnu.edu.vn/jspui/handle/123456789/6681

Title: Chemical properties and GMR improvement of specular spin valves with nano-oxide layers, formed in ambient mixed gases
Authors: Quang, H.D.
Hien, N.T.
Oh, S.K.
Sinh, N.H.
Yu, S.C.
Keywords: Annealing
Argon
Electron scattering
Ferromagnetism
Giant magnetoresistance
High temperature effects
Interfaces (materials)
Oxidation
Secondary ion mass spectrometry
Thermodynamic stability
X ray photoelectron spectroscopy
Ferromagnetic coupling
Interlayer coupling fields
Nano-oxide layers (NOL)
Specular spin valves
Nanostructured materials
Issue Date: 2004
Publisher: Journal of Physics D: Applied Physics
Citation: Volume 37, Issue 23, Page 3290-3295
Abstract: Specular spin valves (SVs) containing nano-oxide layers (NOLs) structured as substrate/seed/AF/P 1/NOL/P2/Cu/F/NOL, have been fabricated. The NOLs were formed by natural oxidation in different ambient atmospheres of pure oxygen, oxygen/nitrogen and oxygen/argon gas mixtures. The fabrication conditions were optimized to enhance the magnetoresistance (MR) ratio, to suppress the interlayer coupling fields (Hf) between the free and pinned layers, to suppress the high interface density of the NOL, to ease the control of the NOL thickness and to form a smooth NOL/P2 interface for promoting specular electron scattering. The characteristics of our specular SVs are the MR ratio of 14.1%, the exchange bias field of 44- 45 mT, and Hf weaker than 1.0 mT. The optimal conditions for oxidation time, total oxidation pressure and the annealing temperature were found to be 300 s, 0.14 Pa (oxygen/argon = 80/20) and 250?C, respectively. Also, the origin of thermal stability of MMn-based (M = Fe, Pt, Ir, etc) specular SVs has been explained in detail by chemical properties of NOL using secondary-ion mass spectroscopy and x-ray photoelectron spectroscopy depth profile analyses. Thermal stability turns out to be caused by a decrease in MR ratios at high temperatures (>250?C), which is a serious problem for device applications using the SV structure as a high density read head device.
URI: http://tainguyenso.vnu.edu.vn/jspui/handle/123456789/6681
ISSN: 223727
Appears in Collections:2001-2005 VNU-DOI-Publications

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