Physical Review B - Condensed Matter and Materials Physics
Citation:
Volume: 55 Issue: 5 Page : 2863-2866
Abstract:
Defects in electron-irradiated 3C SiC were studied by optically detected magnetic resonance
(ODMR). In addition to the isotropic L2 center previously reported, an ODMR spectrum labeled L3, with a
trigonal symmetry and an effective electron spin S=1, was observed after annealing at ?750 ?C. The g values
of the center along and perpendicular to the trigonal axis were determined as g?=2.0041 and g?=2.0040. The
anisotropy of the spectrum is accounted for by the spin-spin interaction with a crystal-field splitting value
D=4.2??10-2 cm-1. From a spectral dependence study of the ODMR signal, the defect is found to be related
to a photoluminescence band in the near midgap region. The defect is likely a complex involving a silicon
vacancy and another intrinsic defect as suggested from its trigonal symmetry and annealing behavior.
